Model of Adsorption on Epitaxial Single-Layer Graphene

Magnetospectroscopy of epitaxial few-layer graphene

The inter-Landau level transitions observed in far-infrared transmission experiments on few-layer graphene samples show a behaviour characteristic of the linear dispersion expected in graphene. This behaviour persists in relatively thick samples, and is qualitatively different from that of thin samples of bulk graphite.

Electronic structure of few-layer epitaxial graphene on Ru(0001).

The electronic structure of epitaxial monolayer, bilayer, and trilayer graphene on Ru(0001) was determined by selected-area angle-resolved photoelectron spectroscopy (micro-ARPES). Micro-ARPES band maps provide evidence for a strong electronic coupling between monolayer graphene and the adjacent metal, which causes the complete disruption of the graphene pi-bands near the Fermi energy. However,...

Study of Stone-wales Defect on Elastic Properties of Single-layer Graphene Sheets by an Atomistic based Finite Element Model

In this paper, an atomistic based finite element model is developed to investigate the influence of topological defects on mechanical properties of graphene. The general in-plane stiffness matrix of the hexagonal network structure of graphene is found. Effective elastic modulus of a carbon ring is determined from the equivalence of molecular potential energy related to stretch and angular defor...

Atomic-Layer-Deposited High-k Dielectric Integration on Epitaxial Graphene

The scaling of silicon-based MOSFET technology beyond the 22 nm node is challenging. Further progress requires new channel materials such as Ge, III-V semiconductors, carbon nanotubes (CNTs) and graphene. Perfect top-gate dielectric stacks are needed in order to sustain their potential device performance for carbon nanoelectronics. Due to the inert nature of carbon surfaces of CNTs and graphene...

The 2-D growth of gold on single-layer graphene/Ru(0001): Enhancement of CO adsorption